"Si-Ge-C growth and devices," D.W. Greve, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland), Materials Science & Engineering B (Solid-State Materials for Advanced Technology), vol.B87, no.3 p. 271-6 (2001).
"Chemical Vapor Deposition of Group IV Alloys on Silicon," D.W. Greve, Encyclopedia of Materials: Science and Technology, K.H.J. Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer, and S. Mahajan, editors, Elsevier (2001).
"UHV/CVD and related growth techniques for Si and other materials," D.W. Greve, in Properties of Crystalline Silicon, EMIS Datareviews Series No. 20, R. Hull, editor, INSPEC/IEEE, 1999)
“Gas-source molecular beam epitaxy of Si and other materials,” D.W. Greve (in Properties of Crystalline Silicon, EMIS Datareviews Series No. 20, R. Hull, editor, INSPEC/IEEE, 1999).
"GexSi1-x Epitaxial Growth and Application to Integrated Circuits," invited book chapter in Physics of Thin Films, Volume 23, pp. 1-82, M. Francombe, editor (Academic Press, 1997).
"Growth of Epitaxial Germanium-Silicon Heterostructures by Chemical Vapour Deposition," D.W. Greve, Mater. Sci. Engrg. B18, 22- 51 (1993).
"UHV/ CVD Epitaxy of Si and GexSi1-x," M. Racanelli and D.W. Greve, Journal of Metals, pp. 32-37, October, 1991.