Surface processes during growth of boron
This work was in collaboration with
Andrew Gellman and Charmaine Chan
(of the Department of Chemical Engineering)
Ryan Desrosiers (of Electrical and
In this work, we used surface science techniques to
investigate the growth of boron nitride on substrates thought to be particularly
favorable for the formation of the desirable cubic phase. A number of
publications below document our work on the lattice-matched Ni(100) substrate.
We have also studied the reactions on AlN grown by MOCVD.
- "Nucleation of boron nitride thin films on
Ni(100)," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Surface
Science 382, 35 (1997).
- "Nucleation of boron nitride on Ni(100)
surfaces," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, Mater. Sci.
Engrg. B46, 84 (1997).
- "Decomposition of B2H6 on
Ni(100)," R.M. Desrosiers, D.W. Greve, and A.J. Gellman, J. Vac. Sci.
Technol. A15, 2181 (1997).
- "Decomposition of Diborane and Ammonia on Ni(100)
Surfaces," R.M. Desrosiers, A.J. Gellman, D.W. Greve, and C.F.
McFadden, in Diamond Materials IV, pp. 330-335 (The Electrochemical Society,
Pennington, NJ, 1995).
"Growth of AlBN solid solutions by organometallic
vapor phase epitaxy", A.Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D.W.
Greve, R.G. Wilson, J. Appl. Phys. 81, 1715 (1997).